SIGC12T120E edited by in fineon technologies , ifag ipc td vls , l7621m , l7621t, l7621e, rev 2.3 , 27 .0 6.2014 igbt 3 power chip features : ? ? ? ? ? this chip is used for: ? applications: ? chip type v ce i c die size package s igc12t120e 1200v 8 a 3.54 x 3.5 mm 2 sawn on foil mechanical p arameter s raster size 3.54 x 3.5 mm 2 emitter pad size (incl. gate pad) 2.028 x 2.028 gate pad size 1.107 x 0.702 area total 12.4 thickness 1 40 m wafer size 200 mm max.possible chips per wafer 2213 passivation frontside photoimide pad metal 3200 nm alsicu backside metal ni ag C system suitable for epoxy and soft solder die bonding die bond e lectrically conductive glue or solder wire bond al, <500m reject i nk dot s ize ? 0.65mm ; max 1.2mm recommended storage e nvironment s tore in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23c g c e
SIGC12T120E edited by in fineon technologies , ifag ipc td vls , l7621m , l7621t, l7621e, rev 2.3 , 27 .0 6.2014 maximum r atings parameter symbol value unit collector - e mitter voltage , t vj =25 ? c v ce 1200 v dc collector current, limited by t vj max i c 1 ) a pulsed collector current, t p limited by t vj max i c , p u l s 24 a gate emitter voltage v ge ? 20 v j unction temperature range t vj - 40 ... +175 c o perating junction temperature t vj - 40 ...+1 50 ? c short circuit data 2 ) v ge = 15v, v cc = 9 00v, t vj = 150c t sc 10 s reverse bias safe operating area 2 ) (rbsoa) i c , m a x = 16 a, v c e , m a x = 1200v t vj ? 150 c 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verifie d by design/characterization static c haracteristic s (tested on wafer ), t vj =25 ? parameter symbol conditions value unit min. typ. max. collector - e mitter breakdown voltage v (br)ces v ge =0v , i c = 0. 5 ma 1200 v collector - e mit ter saturation voltage v ce sat v ge =15v, i c =8 a 1. 4 1. 7 2. 1 gate - e mitter threshold voltage v ge(th) i c =300 a , v ge = v ce 5.0 5.8 6.5 zero gate voltage collector current i ces v ce =1200v , v ge =0v 1.23 a gate - e mitter leakage current i ges v ce =0v , v ge =2 0v 1 20 na integrated gate resistor r g -- ? dynamic c haracteristic s ( not subject to production test - verified by design / characterization ) , t vj =25 ? parameter symbol conditions value unit min. typ. max. input capacitance c i e s v ce = 25 v , v ge = 0v , f = 1 mh z 605 pf output capacitance c o e s 37 reverse transfer capacitance c r e s 29
SIGC12T120E edited by in fineon technologies , ifag ipc td vls , l7621m , l7621t, l7621e, rev 2.3 , 27 .0 6.2014 further e lectrical c haracteristic switching characteristics and thermal properties are depending strongly on module design and mounting te chnology and can therefore not be specified for a bare die.
SIGC12T120E edited by in fineon technologies , ifag ipc td vls , l7621m , l7621t, l7621e, rev 2.3 , 27 .0 6.2014 chip d rawing e = emitter g = gate e g
SIGC12T120E edited by in fineon technologies , ifag ipc td vls , l7621m , l7621t, l7621e, rev 2.3 , 27 .0 6.2014 description aql 0,65 for visual inspection according to failure catalogue electrostatic discharge sensitive device acco rding to mil - std 883 revision h istory version subjects (major changes since last revision) date 2.2 wafer diameter change to 200 mm 06.07.2010 2.3 additional basic types l7621m, l7621t, l7621e 27.06.2014 published by infineon technologies ag 81726 munich, germany ? 2014 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herei n, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non - infringement of i ntellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www. infineon.com ) . warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life - support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of s uch components can reasonably be expected to cause the failure of that life - support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be i mplanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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